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Results 1 to 25 of 1362

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Experimental investigation of plasma recovery during the pulse-off time in plasma source ion implantationCHUNG, Kyoung-Jae; BONGKI JUNG; CHOE, Jae-Myung et al.Thin solid films. 2013, Vol 547, pp 13-16, issn 0040-6090, 4 p.Conference Paper

First-principles super-cell investigation of the rattling effect in Li-doped KClXING GAO; DAW, Murray S.Journal of physics. Condensed matter (Print). 2009, Vol 21, Num 4, issn 0953-8984, 045401.1-045401.5Article

Density functional studies of muonium in nitrogen aggregate containing diamond: the MuX centreETMIMI, K. M; GOSS, J. P; BRIDDON, P. R et al.Journal of physics. Condensed matter (Print). 2009, Vol 21, Num 36, issn 0953-8984, 364211.1-364211.6Article

The problem of doping of non-stoichiometric phasesROGACHEVA, E. I.The Journal of physics and chemistry of solids. 2008, Vol 69, Num 2-3, pp 259-268, issn 0022-3697, 10 p.Conference Paper

Ion beam synthesis of 4H-(Si1-xC1-y)Gex+y solid solutionsPEZOLDT, J; KUPS, Th; VOELSKOW, M et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 4, pp 998-1001, issn 1862-6300, 4 p.Conference Paper

Valence control of α-rhombohedral boron by electronic dopingDEKURA, Haruhiko; SHIRAI, Koun; KATAYAMA-YOSHIDA, Hiroshi et al.Journal of physics. Condensed matter (Print). 2007, Vol 19, Num 36, issn 0953-8984, 365241.1-365241.8Conference Paper

Distribution of boron within the microstructure of a ferritic steel determined using secondary ion mass spectrometryWILD, R. K; HEARD, P. J; FLEWITT, P. E. J et al.Philosophical magazine (2003. Print). 2006, Vol 86, Num 9, pp 1277-1286, issn 1478-6435, 10 p.Article

Molecular doping of poly(p-phenylenevinylene) under vacuum for photovoltaic applicationTANIGAKI, Nobutaka; MOCHIZUKI, Hiroyuki; XIAOLIANG MO et al.Thin solid films. 2006, Vol 499, Num 1-2, pp 110-113, issn 0040-6090, 4 p.Conference Paper

Optical study of the annealing behaviour of the 3107 cm-1 defect in natural diamondsDE WEERDT, F; COLLINS, A. T.Diamond and related materials. 2006, Vol 15, Num 4-8, pp 593-596, issn 0925-9635, 4 p.Conference Paper

Absorption and emission properties of Ho3+ doped lead-zinc-borate glassesSOORAJ HUSSAIN, N; ALI, N; DIAS, A. G et al.Thin solid films. 2006, Vol 515, Num 1, pp 318-325, issn 0040-6090, 8 p.Conference Paper

Iron-oxygen vacancy defect centers in PbTiO3 : Newman superposition model analysis and density functional calculationsMESTRIE, H; EICHEL, R.-A; KLOSS, T et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 13, pp 134109.1-134109.10, issn 1098-0121Article

Microvoid formation in hydrogen-implanted ZnO probed by a slow positron beamCHEN, Z. Q; KAWASUSO, A; XU, Y et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 11, pp 115213.1-115213.8, issn 1098-0121Article

Filling fraction limit for intrinsic voids in crystals : Doping in skutteruditesSHI, X; ZHANG, W; CHEN, L. D et al.Physical review letters. 2005, Vol 95, Num 18, pp 185503.1-185503.4, issn 0031-9007Article

Effect of pre-Co-deposition Ni ion implantation on the stress level of CoSi2 films on Si(100)MA, K; FENG, J. Y.Journal of crystal growth. 2004, Vol 270, Num 1-2, pp 15-20, issn 0022-0248, 6 p.Article

High-quality carbon-doped β-type FeSi2 films synthesized by ion implantationCHUANG DONG; XIAONA LI; DONG NIE et al.Thin solid films. 2004, Vol 461, Num 1, pp 48-56, issn 0040-6090, 9 p.Conference Paper

Overcoming the doping bottleneck in semiconductorsWEI, Su-Huai.Computational materials science. 2004, Vol 30, Num 3-4, pp 337-348, issn 0927-0256, 12 p.Conference Paper

The influence of pressure on high-pressure, high-temperature annealing of type Ia diamondDE WEERDT, F; COLLINS, A. T.Diamond and related materials. 2003, Vol 12, Num 3-7, pp 507-510, issn 0925-9635, 4 p.Conference Paper

Substitutional sites of Co2+ ions in CuGa1-xAlxSe2:Co2+ crystalsWEN-CHEN, Zheng; SHAO-YI, Wu; BEI-JUN, Zhao et al.The Journal of physics and chemistry of solids. 2002, Vol 63, Num 5, pp 895-897, issn 0022-3697Article

Investigations on the swift heavy ion implanted GaAs substratesJAYAVEL, P; ARULCHAKKARAVARTHI, A; RAMASAMY, P et al.Vacuum. 2002, Vol 68, Num 4, pp 291-296, issn 0042-207X, 6 p.Article

Computer modelling of rare-earth dopants in BaLiF3JACKSON, R. A; VALERIO, M. E. G; DE LIMA, J. F et al.Journal of physics. Condensed matter (Print). 2001, Vol 13, Num 10, pp 2147-2154, issn 0953-8984Article

Formation of Al3Hf by Hf ion implantation into aluminum using a metal vapor vacuum arc ion sourceMIAO WEI; TAO KUN; LIU XINGTAO et al.Surface & coatings technology. 2001, Vol 140, Num 2, pp 136-140, issn 0257-8972Article

Inhibition of Jahn-Teller cooperative distortion in LiMn2O4 spinel by transition metal ion dopingCAPSONI, Doretta; BINI, Marcella; CHIODELLI, Gaetano et al.PCCP. Physical chemistry chemical physics (Print). 2001, Vol 3, Num 11, pp 2162-2166, issn 1463-9076Article

On possible Cu doping of Bi2WO6CHNOONG KHENG LEE; LENG TZE SIM; COATS, Alison M et al.Journal of material chemistry. 2001, Vol 11, Num 4, pp 1096-1099, issn 0959-9428Article

Determination of lattice site locations of erbium ions implanted into LiNbO3 single crystals after annealing at moderate and high temperatureMIGNOTTE, C.Applied surface science. 2001, Vol 185, Num 1-2, pp 11-26, issn 0169-4332Article

Phosphorus site after CIRA implantation of type IIa diamondCASANOVA, N; GHEERAERT, E; DENEUVILLE, A et al.Diamond and related materials. 2001, Vol 10, Num 3-7, pp 580-584, issn 0925-9635Conference Paper

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